鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
h
FE
ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CEO
V
EBO
I
CBO
h
FE
h
FE(Small/
Large)
Conditions
I
C
=
100
碌A(chǔ),
I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
100 V, I
E
=
0
V
CE
=
5 V, I
C
=
10 mA
V
CE
=
5 V, I
C
=
10 mA
I
C
= 30
mA, I
B
= 3
mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
150
5
Typ
Max
1
90
0.50
0.99
1
150
2.3
450
V
CE(sat)
f
T
C
ob
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00148BED
0.2
鹵0.1
Unit
V
V
碌A(chǔ)